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| TBAV70 low power signal diodes page 1 08/05/06 v1.0 features: ? silicon planar epitaxial high-speed diodes. ? supplied on 8mm tape. sot-23 formed smd package package outline details dimensions : millimetres dimensions : millimetres absolute maximum ratings description symbol values unit continuous reverse voltage v r maximum 70 v repetitive peak reverse voltage v rrm 75 repetitive peak forward current i frm 450 ma junction temperature t j 150 c forward voltage i f = 50ma v f < 1.0 v reverse recovery time when switched from i f = 10ma to i r = 10ma; r l = 100w; measured at i r = 1ma t rr < 4 ns recovery charge when switched from i f = 10ma to v r = 5v; r l = 100w q s < 45 pc height width depth 1.12 3.05 2.5 pin configuration 1 = anode 2 = anode 3 = cathode
TBAV70 low power signal diodes page 2 08/05/06 v1.0 ratings (per diode) limiting values description symbol values unit continuous reverse voltage v r maximum 70 v repetitive peak reverse voltage v rrm 75 v forward current (dc) i f 215 ma repetitive peak forward current i frm 450 non-repetitive peak forward current (per crystal) t = 1ns t = 1ms t = s i fsm i fsm i fsm 4 1 0.5 a storage temperature range t stg -55 to +150 c junction temperature t j maximum 150 thermal resistance description symbol values unit from junction to ambient t j = 25 c unless otherwise specified r th (j-a) = 500 k/w forward voltage i f = 1 ma i f = 10 ma i f = 50 ma i f = 150 ma v f v f v f v f < < < < 715 855 1000 1250 mv reverse current v r = 25v; t j = 150c v r = 70v v r = 70v; t j = 150c i r i r i r < < < 60 2.5 100 ma diode capacitance v r = 0; f = 1mhz c d < 1.5 pf forward recovery voltage when switched to i f = 10ma, t r = 20ns v fr < 1.75 v TBAV70 low power signal diodes page 3 08/05/06 v1.0 connection v rrm maximum (v) i f maximum (ma) v f maximum (v) at i f = 10ma device marking package part number dual diode 70 200 1 a4 sot - 23 TBAV70 specifications |
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